NSN 5961-00-073-8892
Part Details | TRANSISTOR
5961-00-073-8892 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: USN2N1613, USN2N1613, 9405951, 940595-1, USN2N1613, USN2N1613, USN2N1613, 5961-00-073-8892, 00-073-8892, 5961000738892, 000738892
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 11, 1967 | 00-073-8892 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-073-8892
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| USN2N1613 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| USN2N1613 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
| 940595-1 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| USN2N1613 | 33173 | MPD, INC. |
| USN2N1613 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| USN2N1613 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-073-8892
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
| POWER RATING PER CHARACTERISTIC | AF3.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES NOMINAL |
| OVERALL DIAMETER | 0.312 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |