NSN 5961-00-069-6662
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-069-6662 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40131750701, 4013175-0701, 213B126, 509C545G41, 5961-00-069-6662, 00-069-6662, 5961000696662, 000696662
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUL 11, 1967 | 00-069-6662 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-069-6662
Part Number | Cage Code | Manufacturer |
---|---|---|
4013175-0701 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
213B126 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
509C545G41 | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-069-6662
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
CURRENT RATING PER CHARACTERISTIC | CC30.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AE5.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | THREADED STUD |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.500 INCHES |
TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 3 UNINSULATED WIRE LEAD W/TERMINAL LUG |
OVERALL LENGTH | 0.938 INCHES MAXIMUM |
OVERALL WIDTH ACROSS FLATS | 1.062 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |