NSN 5961-00-069-2116
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-069-2116 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C11BX261, 4JC11BX261, 7233719P001, C11BX261, 5961-00-069-2116, 00-069-2116, 5961000692116, 000692116
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1963 | 00-069-2116 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-069-2116
Part Number | Cage Code | Manufacturer |
---|---|---|
C11BX261 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
4JC11BX261 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
7233719P001 | 03538 | LOCKHEED MARTIN CORPORATIONDIV RMS |
C11BX261 | 66844 | POWEREX, INC |
Technical Data | NSN 5961-00-069-2116
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM GATE VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | DE2.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AH0.5 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
MOUNTING METHOD | THREADED STUD |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.190 INCHES |
TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
OVERALL LENGTH | 0.400 INCHES MAXIMUM |
OVERALL DIAMETER | 0.437 INCHES MAXIMUM |