NSN 5961-00-069-2116

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-069-2116 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: C11BX261, 4JC11BX261, 7233719P001, C11BX261, 5961-00-069-2116, 00-069-2116, 5961000692116, 000692116

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196300-069-211633096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-069-2116
Part Number Cage Code Manufacturer
C11BX26103508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
4JC11BX26103508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
7233719P00103538LOCKHEED MARTIN CORPORATIONDIV RMS
C11BX26166844POWEREX, INC
Technical Data | NSN 5961-00-069-2116
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC10.0 MAXIMUM GATE VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICDE2.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAH0.5 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.190 INCHES
TERMINAL TYPE AND QUANTITY2 TAB, SOLDER LUG AND 1 THREADED STUD
OVERALL LENGTH0.400 INCHES MAXIMUM
OVERALL DIAMETER0.437 INCHES MAXIMUM