NSN 5961-00-067-8121

Part Details | TRANSISTOR

5961-00-067-8121 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: RELEASE3554, 2N1132B, 2N1132B, 2N1132B, 2N1132B, 2N1132B, 5961-00-067-8121, 00-067-8121, 5961000678121, 000678121

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196300-067-812120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-067-8121
Part Number Cage Code Manufacturer
RELEASE355480131ELECTRONIC INDUSTRIES ASSOCIATION
2N1132B80131ELECTRONIC INDUSTRIES ASSOCIATION
2N1132B34156FALKOR PARTNERS, LLCDBA SEMICOA
2N1132B03877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
2N1132B00816PALOMAR PRODUCTS, INC.
2N1132B30043SOLID STATE DEVICES, INC.
Technical Data | NSN 5961-00-067-8121
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC600.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB600.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.250 INCHES NOMINAL
OVERALL DIAMETER0.359 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELEAE3554 GOVERNMENT SPECIFICATION