NSN 5961-00-060-1638
Part Details | TRANSISTOR
5961-00-060-1638 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1233, 90020184, 900201-84, 2N1233, 5961-00-060-1638, 00-060-1638, 5961000601638, 000601638
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1963 | 00-060-1638 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-060-1638
Part Number | Cage Code | Manufacturer |
---|---|---|
2N1233 | 73293 | L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC. |
900201-84 | 06481 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NAVIGATION AND MARITIME SYSTEMS |
2N1233 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-060-1638
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -65.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -65.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC100.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB400.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.290 INCHES MINIMUM AND 0.570 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
TEST DATA DOCUMENT | 06481-900201-84 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |