NSN 5961-00-059-5284
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-059-5284 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 10018580021, 10018580-021, DL227, 1N458, 10018580021, 10018580-021, 10018580021, 10018580-021, 5961-00-059-5284, 00-059-5284, 5961000595284, 000595284
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-059-5284 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-059-5284
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 10018580-021 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| DL227 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 1N458 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
| 10018580-021 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
| 10018580-021 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-059-5284
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CG100.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF250.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.125 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |