NSN 5961-00-051-1992
Part Details | TRANSISTOR
5961-00-051-1992 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N542, 2N542, 10131680, 5961-00-051-1992, 00-051-1992, 5961000511992, 000511992
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-051-1992 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-051-1992
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N542 | 24446 | GENERAL ELECTRIC COMPANY |
| 2N542 | 03538 | LOCKHEED MARTIN CORPORATIONDIV RMS |
| 10131680 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-051-1992
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC25.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB200.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |
| OVERALL DIAMETER | 0.359 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |