NSN 5961-00-044-4808
Part Details | TRANSISTOR
5961-00-044-4808 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3440, 5307101, 530710-1, 5961-00-044-4808, 00-044-4808, 5961000444808, 000444808
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 24, 1968 | 00-044-4808 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-044-4808
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N3440 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 530710-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-044-4808
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM AND AB500.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB28.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |