NSN 5961-00-020-0070
Part Details | TRANSISTOR
5961-00-020-0070 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 810001418, 810001-418, 559995013, 559995-013, 2N700, 2N700, 2N700, 5961-00-020-0070, 00-020-0070, 5961000200070, 000200070
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | MAY 15, 1968 | 00-020-0070 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-020-0070
Part Number | Cage Code | Manufacturer |
---|---|---|
810001-418 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
559995-013 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
2N700 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2N700 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
2N700 | 30043 | SOLID STATE DEVICES, INC. |
Technical Data | NSN 5961-00-020-0070
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | GERMANIUM |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 20.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 0.2 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | AC50.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AG75.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-17 |
MOUNTING METHOD | TERMINAL |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.180 INCHES MAXIMUM |
OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |