NSN 5961-00-011-1644

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-011-1644 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 1193001P1, 2N886, 25792822, 2579282-2, 2N886, 2N886, 5961-00-011-1644, 00-011-1644, 5961000111644, 000111644

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 20, 196700-011-164433096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-011-1644
Part Number Cage Code Manufacturer
1193001P194117BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC.
2N88609214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2579282-207187HONEYWELL INTERNATIONAL INC.DBA HONEYWELL
2N88612969MICRO USPD INC
2N88681349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
Technical Data | NSN 5961-00-011-1644
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKOVER VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICCG20.00 AMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS CASE
INCLOSURE MATERIAL GLASS AND METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.190 INCHES NOMINAL
OVERALL DIAMETER0.187 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN