NSN 5961-00-009-3209
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-009-3209 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 5042457, 5042-457, FBP00019, FBP00-019, 250K, 5961-00-009-3209, 00-009-3209, 5961000093209, 000093209
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 02, 1972 | 00-009-3209 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-009-3209
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5042-457 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| FBP00-019 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
| 250K | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-009-3209
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | C+125.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.500 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 2 THREADED STUD |
| OVERALL LENGTH | 1.130 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 1.062 INCHES NOMINAL |