NSN 5961-00-006-5420
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-006-5420 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 190017P3, RELEASE6049, 1N5630A, 1N5630A, 5961-00-006-5420, 00-006-5420, 5961000065420, 000065420
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 23, 1972 | 00-006-5420 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-006-5420
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 190017P3 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| RELEASE6049 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5630A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5630A | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
Technical Data | NSN 5961-00-006-5420
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.4 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | CH132.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.0 WATTS MAXIMUM |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-13 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6049 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |