NSN 5961-00-069-6767
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-069-6767 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 2470510, 1N1614R, 1N1614R, 2470510, RKZ 122 20422, RKZ 122 204/22, 5961-00-069-6767, 00-069-6767, 5961000696767, 000696767
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1963 | 00-069-6767 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-069-6767
Part Number | Cage Code | Manufacturer |
---|---|---|
2470510 | 72314 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
1N1614R | 51182 | DIODES INC |
1N1614R | 08225 | INDUSTRO TRANSISTOR CORP |
2470510 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
RKZ 122 204/22 | S3092 | RHEINMETALL AIR DEFENCE AG |
Technical Data | NSN 5961-00-069-6767
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 240.0 MAXIMUM REVERSE VOLTAGE, DC AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
CURRENT RATING PER CHARACTERISTIC | AF15.00 AMPERES MAXIMUM AND CG10.00 AMPERES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 190.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | THREADED STUD |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.190 INCHES |
TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
OVERALL LENGTH | 0.405 INCHES MAXIMUM |
OVERALL WIDTH ACROSS FLATS | 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |