NSN 5961-00-062-9649
Part Details | TRANSISTOR
5961-00-062-9649 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 10181734, 10181734, 10181734, 10181734, 5961-00-062-9649, 00-062-9649, 5961000629649, 000629649
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 27, 1967 | 00-062-9649 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-062-9649
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 10181734 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 10181734 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 10181734 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 10181734 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-062-9649
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AK10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1000.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |