NSN 5961-00-058-7337
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-058-7337 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 4E100M8, 4E100M8, 4E100M8, 22479169, 2247916-9, 22479169, 2247916-9, 22479169, 2247916-9, 22479169, 2247916-9, 5961-00-058-7337, 00-058-7337, 5961000587337, 000587337
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-058-7337 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-058-7337
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4E100M8 | 66891 | BKC SEMICONDUCTORS INC |
| 4E100M8 | 14433 | ITT SEMICONDUCTORS DIV |
| 4E100M8 | 15238 | ITT SEMICONDUCTORSA DIVISION OF INTERNATIONAL |
| 2247916-9 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 2247916-9 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2247916-9 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 2247916-9 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-058-7337
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| CURRENT RATING PER CHARACTERISTIC | DH15.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF150.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 INSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |