NSN 5961-00-052-4115
Part Details | TRANSISTOR
5961-00-052-4115 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JAN2N1489A, JAN2N1490A, 5961PL1438732, JAN2N1490, 2N1490, 491328900, 4913289-00, 3501373, JAN2N1489, QPLJAN2N1490, QPL-JAN2N1490, MILS19500208, MILS19500-208, JAN2N1490, 4192800105, 4192800-105, 3529085000, 352-9085-000, 2N1490, 352250005049, VBE8902N1490, VBE890-2N1490, 5961-00-052-4115, 00-052-4115, 5961000524115, 000524115
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1961 | 00-052-4115 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-052-4115
Part Number | Cage Code | Manufacturer |
---|---|---|
JAN2N1489A | C7191 | ADELCO ELEKTRONIK GMBH |
JAN2N1490A | C7191 | ADELCO ELEKTRONIK GMBH |
5961PL1438732 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
JAN2N1490 | 34371 | INTERSIL CORPORATIONDIV NA |
2N1490 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
4913289-00 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
3501373 | 03640 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
JAN2N1489 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
QPL-JAN2N1490 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MILS19500-208 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN2N1490 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
4192800-105 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
352-9085-000 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
2N1490 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
352250005049 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
VBE890-2N1490 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-00-052-4115
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 55.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 10.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB3.00 AMPERES MAXIMUM AND AC6.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB75.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
OVERALL LENGTH | 0.562 INCHES MAXIMUM |
OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
OVERALL HEIGHT | 0.562 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 208 GOVERNMENT SPECIFICATION |