NSN 5961-00-045-8681
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-045-8681 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N56, 1N56, 1N56, 1N56, 1N56, 6178333, 617833-3, 5961-00-045-8681, 00-045-8681, 5961000458681, 000458681
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1961 | 00-045-8681 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-045-8681
Part Number | Cage Code | Manufacturer |
---|---|---|
1N56 | 27622 | BURNS AND TOWNE INC |
1N56 | 14936 | GENERAL SEMICONDUCTOR INC |
1N56 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
1N56 | 14433 | ITT SEMICONDUCTORS DIV |
1N56 | 92703 | KEMTRON ELECTRON PRODUCTS INC |
617833-3 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-045-8681
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | GERMANIUM |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REVERSE VOLTAGE, PEAK |
CURRENT RATING PER CHARACTERISTIC | CF1000.00 MICROAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF80.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.150 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |