NSN 5961-00-025-5899

Part Details | TRANSISTOR

5961-00-025-5899 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: L00885, JAN2N1613, JAN2N1613, 5961-00-025-5899, 00-025-5899, 5961000255899, 000255899

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 21, 197200-025-589920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-025-5899
Part Number Cage Code Manufacturer
L0088516236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
JAN2N161349956RAYTHEON COMPANYDBA RAYTHEON
JAN2N16133B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-025-5899
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC500.00 MILLIAMPERES MAXIMUM AND AE1.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB800.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L00885; JUNCTION PATTERN ARRANGEMENT: NPN
CRITICALITY CODE JUSTIFICATIONFEAT